Apparatus for decomposing perfluorinated compounds and system for processing perfluorinated compounds using the apparatus

ABSTRACT

The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional of application Ser. No. 10/423,870, filed Apr. 28,2003, which is incorporated herein by reference in its entirety, andissued on Jun. 19, 2007 as U.S. Pat. No. 7,232,552.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an apparatus for decomposingperfluorinated compounds and to a system for processing perfluorinatedcompounds.

A claim of priority is made to Korean Patent Application No. 2002-23508,filed in the Korean Intellectual Property Office on Apr. 29, 2002, theentirety of which is incorporated herein by reference.

2. Description of the Related Art

Perfluorinated compounds (PFCs) are toxic waste gases generated andexhausted into the air during the manufacture of semiconductor devices.PFCs are commonly used in dry etching, chemical vapor deposition, andchamber cleaning processes. Typical examples of PFCs include CF₄, C₂F₆,C₃F₈, CHF₃, NF₃, SF₆, and the like. PFCs are very stable compoundsinherently having a strong binding force, so they are resistant todecomposition and have a long lifespan. Furthermore, the global warmingpotential of PFCs is much higher than that of carbon oxide, which hasprompted the Word Semiconductor Council to voluntarily take steps toreduce the discharge of the PFCs.

A conventional technique for processing PFCs exhausted during themanufacture of semiconductor devices is disclosed in U.S. StatutoryInvention Registration (SIR) No. H1701. According to this method,fluorine in the exhaust gas is reacted with aluminum to produce AlF₃ asa waste form. However, the addition of aluminum increases costs. Inaddition, the requirement for additional equipment for processing thereaction product increases the overall processing system size andmaintenance and management functions.

There exist a variety of PFC processing methods, including a methodinvolving the addition of alkaline earth metals and a powerful reducingagent, a method involving high-temperature combustion, and a methodinvolving the removal of particles from the exhaust gas, the addition ofhydrogen or water and oxygen, and thermal decomposition above 600° C.Recently, a method for removing PFCs through exposure to a process gasin a plasma state at 10,000K and rapid cooling has been proposed.However, in such a high-temperature thermal plasma technique, it isnecessary to head the process gas to at least 600° C. and to keep thishigh temperature level for period of time, and thus energy consumptionis high. Moreover, the throughput and performance are not high whencompared with labor and cost inputs.

According to most techniques using low-temperature plasma, similar tothe above-described U.S. SIR, PFCs are converted into solid wasteparticles by the addition of alkaline earth metals or other additives.However, as described above, these techniques are considered to beuneconomical due to the need for collateral equipment, and theaccompanying maintenance and management costs.

SUMMARY OF THE INVENTION

The present invention provides an apparatus for decomposingperfluorinated compounds (PFCs), which can be adapted to be directlyequipped in a gas exhaust duct, rather than as independent equipment,and which decomposes a large amount of PFCs contained in an exhaust gasfrom the gas exhaust duct by applying electrical energy to the exhaustgas. The apparatus can be conveniently maintained and managed, andallows for a high-throughput.

The invention also provides an apparatus for decomposing PFCs, in whichan electron beam and plasma oscillations are induced by high-voltageapplication of high-density, high frequency waves across an entire pathof PFC gas, thus improving processing efficiency.

The invention also provides a system for processing PFCs using any ofthe apparatus for decomposing PFCs of the invention.

According to an aspect of the present invention, there is provided anapparatus for decomposing PFCs, the apparatus including an externalelectrode unit which is coupled to a reference voltage and which definesa space for allowing the PFC to flow, an internal electrode unit locatedwithin the space of the external electrode unit to define a reactionspace between the internal electrode unit and the external electrodeunit, and a voltage supply unit which applies an alternating voltage tothe internal electrode unit of sufficient voltage and frequency togenerate an electron beam within the reaction space which is capable ofdecomposing the PFCs.

The internal electrode unit may have a polygonal, such as rectangular oroctagonal cross-section, or an elliptical cross-section, and preferably,a perfectly circular cross-section for uniform electric fieldgeneration. The external electrode unit may be formed to be cylindrical.

The internal electrode unit is assembled from a plurality of annularplates with a plurality of protruding implanter poles spaced from eachother at regular intervals along the outer edge of each of the annularplates, and a plurality of guide rings interposed between each of theannular plates to regularly space the annular plates.

The implanter poles are formed to have a needle-like shape protrudingalong the edge of each of the annular plates, and the number ofimplanter poles for each annular plate is in the range of 30-110, andpreferably, equal to 75.

For processing efficiency, it is preferable that the internal electrodeunit be assembled such that the implanter poles between adjacent annularplates are displaced by a predetermined angle, and preferably, 1.2degrees when 75 implanter poles are formed on each annular plate. Toefficiently decompose and remove PFCs, it is preferable that thethickness of the guide rings to be 2.5-3.5 times greater than that ofthe annular plates.

In a PFC decomposing apparatus according to the present invention, thevoltage supply unit includes a support unit that is electricallyconnected to and supports the internal electrode unit with a constantseparation gap from the external electrode unit, and a voltage generatorthat generates the alternating voltage to be applied to the internalelectrode unit via the support unit.

The support unit may be constructed to support both ends of the internalelectrode unit. A shaft penetrating through the internal electrode unitmay be further coupled to the support unit supporting both ends of theinternal electrode unit.

The voltage generator may comprise a crowbar circuit using thecharacteristics of a high voltage capacitor. The high voltage generatormay use a line pulser device which generates rectangular high-voltagecurrent pulses for rapid charging.

According to another aspect of the present invention, there is provideda system for processing PFCs, the system including a pumping unit thatpumps out the PFCs from a reaction chamber, a decomposition apparatusthat applies electrical energy to the PFCs discharged by the pumpingunit to decompose the PFCs into compounds that can be wet processed, anda scrubber that wet processes the compounds which have been decomposedby the decomposition apparatus.

Examples of such a reaction chamber include a dry etching chamber, achemical vapor deposition chamber, etc. using the PFC gas. A pluralityof PFC decomposing apparatuses may be connected in series or in parallelfor higher processing capacity of the system.

According to embodiments of the present invention, PFCs are allowed toflow through a reaction space formed by an internal electrode unit whichhas implanter poles capable of emitting an electron beam at an ambienttemperature and pressure in response to the application of a highvoltage, and an external electrode unit formed to surround the internalelectrode unit. As a high-frequency voltage is applied to the implanterpoles of the internal electrode unit and high-energy electron beams aregenerated by the implanter poles, the binding structure of the PFCs isdissociated into compounds, such as water or carbon dioxide, that arelikely to decompose by subsequent wet processing in a scrubber.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more readily apparent from the detailed description thatfollows, with reference to the accompanying drawings, in which:

FIG. 1 is a schematic view of a system for processing perfluorinatedcompounds (PFCs) according to an embodiment of the present invention;

FIG. 2 is a perspective view of an apparatus for decomposing PFCsaccording to an embodiment of the present invention;

FIG. 3 is a sectional view of the PFC decomposing apparatus shown inFIG. 2;

FIG. 4 is a longitudinal sectional view of the PFC decomposing apparatusshown in FIGS. 2 and 3;

FIG. 5 is a perspective view of an internal electrode unit of the PFCdecomposing apparatus of FIG. 2;

FIG. 6 is an exploded perspective view illustrating a support unit viawhich a high-frequency voltage is applied to the internal electrode unitof FIG. 5;

FIG. 7 is a perspective view of a gas blocking plate for blockingharmful gas from flowing into the internal electrode unit;

FIG. 8 is a front view of a sub-unit of the internal electrode unit ofthe PFC decomposing apparatus shown in FIGS. 2 and 3;

FIG. 9 is a side view of the sub-unit of the internal electrode unitshown in FIG. 8;

FIG. 10 is a partial exploded perspective view of the sub-unit of theinternal electrode unit shown in FIG. 8;

FIG. 11 comparatively illustrates the thicknesses of an annular plateand a guide ring shown in FIG. 10;

FIG. 12 is a partial perspective view showing a reaction space in thePFC decomposing apparatus according to an embodiment of the presentinvention;

FIG. 13A is a circuit diagram of a high-capacity current generator usinga general high-frequency voltage (HV) capacitor, and FIG. 13B is a loadcurrent waveform of the high-capacity current generator of FIG. 13A;

FIG. 14A is a basic circuit diagram of a conventional crossbar circuit,and FIG. 14B is a load current waveform of the cross bar circuit of FIG.14A;

FIG. 15A is a diagram of an equivalent crowbar circuit connected to thePFC decomposing apparatus according to an embodiment of the presentinvention, and FIG. 15B is a load current waveform of the crowbarcircuit of FIG. 15A;

FIGS. 16A and 16B are 3-dimensional and 2-dimensional equivalent circuitdiagrams, respectively, illustrating the principles of using rectangularwaves to rapidly charge the PFC decomposing system according to anembodiment of the present invention, and FIG. 16C is a waveform of thecircuit of FIGS. 16A and 16B;

FIG. 17 is an equivalent circuit diagram of a high-frequency voltagesupplying apparatus for a plurality of PFC decomposing apparatusesaccording to an embodiment of the present invention;

FIG. 18 is a perspective view of a plurality of PFC decomposingapparatuses according to an embodiment of the present invention arrangedin parallel; and

FIG. 19 is a perspective view of a plurality of PFC decomposingapparatuses according to an embodiment of the present invention arrangedin series and in parallel.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be described more fully with reference to theaccompanying drawings, in which exemplary embodiments of the inventionare shown. This invention may, however, be embodied in many differentforms and should not be construed as being limited to the embodimentsset forth herein. Rather, the embodiments are provided so as to fullyconvey the concept of the invention to those skilled in the art.

FIG. 1 is a schematic view of a processing system for perfluorinatedcompounds (PFCs) according to an embodiment of the present invention.Referring to FIG. 1, a pumping unit 20 pumps out an exhaust gascontaining PFCs such as CF₄, C₃F₆, C₃F₃, CHF₃, NF₃, SF₆, etc., from areaction chamber 10. The reaction chamber 10 is where dry etching orchemical vapor deposition has been performed using the PFCs in themanufacture semiconductor integrated circuits or liquid crystal displays(LCDs). The exhaust gas containing the PFCs pumped out by the pumpingunit 20 is processed in a decomposing apparatus according to the presentinvention, and then in a scrubber 60, and finally is discharged into theair.

The PFC decomposing apparatus according to the embodiment includes anexternal electrode unit 30 connected to a reference voltage such asground, an internal electrode unit 40 arranged inside the externalelectrode unit 30, and a high voltage supply unit 50 which supplies ahigh voltage to the internal electrode unit 40.

The exhaust gas containing the PFCs pumped out by the pumping unit 20 isallowed to flow through the cylindrical external electrode unit 30 at anambient temperature and pressure. At this time, as a high voltage isapplied to the internal electrode unit 40, a strong electric field isgenerated in a reaction space between the external electrode unit 30 andthe internal electrode unit 40, and the internal electrode unit 40 emitsan electron beam of a high electrical potential or a vapor laser beam.The electron beam decomposes the binding structure of the PFCs flowingthrough the reaction space into compounds, such as water or carbondioxide, that are likely to be processed during a wet process performedin the scrubber 60.

FIG. 2 is a perspective view of the PFC decomposing apparatus accordingto an embodiment of the present invention. FIG. 3 is a sectional view ofthe PFC decomposing apparatus shown in FIG. 2. FIG. 4 is a longitudinalsectional view of the PFC decomposing apparatus shown in FIGS. 2 and 3.

Referring to FIGS. 2 through 4, the external electrode unit (30 inFIG. 1) is constituted as a cylindrical housing 110 having a circularcross-section. The cylindrical housing 110 may be formed of a stainlesssteel, such as SUS, and is grounded, as shown in FIG. 1. Flanges 118having a plurality of coupling holes 120 are formed on both sides of thehousing 110. A plurality of housings 110 may be connected in seriesthrough the coupling holes 120.

The internal electrode unit 40 may be formed to have a polygonal, suchas rectangular or octagonal, cross-section, or an ellipticalcross-section. In the present embodiment, the internal electrode unit 40is formed to have a circular cross-section to correspond to thecylindrical external electrode unit 30. When the external electrode unit30 and the internal electrode unit 40 are configured to have a circularcross-section as in the present embodiment, they are evenly affectedthermally, physically, and chemically as the PFCs flowing through thereaction space between the external electrode unit 30 and the internalelectrode unit 40 react with the electric energy emitted from theelectrodes of the internal electrode unit 40. Therefore, thedisplacement or deformation of the electrode units can be minimized evenafter operation for a long duration. In addition, electrical energy canbe uniformly supplied to all of the electrodes of the internal electrodeunit 40 via a shaft 210, thereby ensuring stable operation of thedecomposing apparatus.

Regarding the topography of the internal electrode unit 40, generally,electrodes emitting anions are formed to have a needle-like shape. Theshape and size of the electrodes determine the features of electricalenergy generated thereby and the electrical characteristics of thereaction space by the electrical energy. In addition, in a case where anumber of electrodes which are the same in size and shape are arrangedcylindrically on the surface of the internal electrode unit 40, theradius of the cylindrically arranged electrodes as well as the number ofelectrodes and their spacing between the electrodes affect powerconsumption and the intensity of the energy emitted by the electrodes.The structure of the external electrode unit 30, which is disposed tosurround the internal electrode unit 40, greatly affects the PFCprocessing efficiency, and thus needs to be considered for consistentand stable processing.

As a result of performance tests conducted on various electrodes ofdifferent shapes and sizes using a standard CF₄ gas, it was found thatarranging a plurality of sharp implanter poles 244 acting as electrodesalong the edge of an annular plate 240 to be evenly spaced from eachother, as shown in FIG. 3, is the most appropriate configuration forprocessing harmful gases containing a large amount of PFCs exhaustedduring the manufacture of semiconductor integrated circuits.

When the diameter of the annular plate 240 with the implanter poles 244was small, the self-charging capacity of the system was too small togenerate a sufficient amount of energy for processing toxic substances,such as CF₄, thereby resulting in a sharp decrease in processingperformance. When the diameter of the annular plate 240 was large, powerconsumption unnecessarily increased, and system durability ensuring alonger period of use was degraded.

Referring to FIG. 10, such a hollow structure of the annular plate 240with the implanter poles 244 was considered in order to reduce theweight of the system. However, the annular plate 240 showed an energycharging capacity that is about 25% lower than a solid plate. Toovercome this drawback of the annular plate 240, in the presentembodiment according to the present invention, a guide ring 250 isinterposed between adjacent annular plates 240, wherein the guide ring250 is formed to have a thickness t₂ about 2.5-3.5 times greater thanthe annular plate 240 with the implanter poles 244 having a thicknesst₁, as shown in FIG. 11, so that the energy charging capacity isimproved.

Based on the results of the performance tests carried out in the presentembodiment while changing the shape and number of electrodes and usingaccessories, a circular arrangement of a number of implanter poles 244was determined to be most suitable. Also, a total of 75 implanter poles244 was considered to be suitable for each annular plate 240. If thenumber of implanter poles 244 is increased over 1.5 times (i.e., toabout 110 pieces), any impacted implanter poles 244 may be deformedwhile moving, installing, or handling the system. Such deformation ofthe implanter poles 244 is considered to be a main cause of degradationin the system reliability. If the number of implanter poles 244 for eachannular plate is less than 30, a sufficient amount of electrical energyfor electrical and chemical processing cannot be generated.

The structure of the internal electrode unit 40 will be described inmore detail with reference to FIGS. 4 and 8 through 11. FIG. 8 is afront view of a sub-unit of the internal electrode unit of the PFCdecomposing apparatus shown in FIGS. 2 and 3. FIG. 9 is a side view ofthe sub-unit of the internal electrode unit shown in FIG. 8. FIG. 10 isa partial exploded perspective view of the sub-unit of the internalelectrode unit shown in FIG. 8. FIG. 11 comparatively illustrates thethicknesses of the annular plate 244 and the guide ring 250 shown inFIG. 10.

In the present embodiment of a PFC decomposing apparatus according tothe present invention, 75 implanter poles 244 are arranged on the edgeof each annular plate 240. As shown in FIGS. 4 and 9, 10 sheets ofannular plates 240 are assembled into one sub-unit, and a total of tensub-units are incorporated into the PFC decomposing apparatus accordingto the present invention. Accordingly, the total number of implanterpoles 244 for one PFC decomposing apparatus according to the presentembodiment amounts to 7500.

Regarding the assembly state of the internal electrode unit 40,referring to FIGS. 8 through 10, ten annular plates 240 and nine guiderings 250 are alternately arranged such that their coupling holes 242 a,242 b, 242 c, and 242 d match and then assembled into a single sub-unitby inserting coupling bolts 246 into the coupling hole 242 a, 242 b, 242c, and 242 d. All of the annular plates 240 for each sub-unit may beformed to have a hollow structure. Alternatively, the first and lastannular plates 240 for each sub-unit may be formed as solid plates buthaving a hexagonal shaft hole 210 b at their center, as shown in FIGS. 8and 9.

When a plurality of annular plates 240, each of which has 75 implanterpoles 244, are assembled into a single sub-unit, for a high processingefficiency, the relative positions of the individual annular plates 240need to be adjusted such that the implanter poles 244 of each of theannular plates 240 are displaced from those of adjacent annular plates240 by 1.2 degrees. To this end, when the annular plates 240 and theguide rings 250 are bound together, each annular plate 240 is rotatedwith respect to the previous one by 90 degrees such that, for example,the coupling hole 242 a of the first annular plate 240 matches thecoupling hole 242 b of the next annular plate 240, as shown in FIG. 10,so that the implanter poles 244 between the adjacent annular plates 240are displaced from each other by 1.2 degrees. In order to make theassembly of the annular plates 240 easier, a single annular plate unitpreviously assembled from ten sheets of annular plate 240 may be usedfor convenience in assembling, transport, installation, and maintenance.

As described above with reference to FIG. 11, in order to decompose andremove comparatively stable, non-reactive PFCs, such as NF₃, C₃F₈, etc.,the thickness t₂ of the guide rings 250 should preferably be about2.5-3.5 times greater than the thickness t₁ of the annular plates 240with the implanter poles 244. If the thickness t₂ of the guide rings 250is less than or equal to the thickness t₁ of the annular plates 240, itis difficult to expect a desired processing efficiency. In particular,the greatest processing efficiency is ensured when the thickness t₂ ofthe guide rings 250 is about 2.5-3.5 times greater than the thickness t₁of the annular plates 240. If the thickness t₂ of the guide rings 250 ismore than 3.5-5.5 times greater than the thickness t₁ of the annularplates 240, the processing efficiency decreases by about 30% from thegreatest processing efficiency. If the thickness t₂ of the guide rings250 is smaller than or equal to the thickness t₁ of the annular plates240, the processing efficiency decreases by about 30% from the greatestprocessing efficiency. If the thickness t₂ of the guide rings 250 is nomore than 2.0 times greater than the thickness t₁ of the annular plates240, the processing efficiency decreases by 50% with respect to thegreatest processing efficiency.

Referring to FIG. 4, ten sub-units of the annular plates 240 and theguide rings 250 are assembled together by a shaft 210 having a hexagonalcross-section penetrating through the center thereof. At this time, anauxiliary guide ring 260 is interposed between each of the sub-units.Once all the sub-units are assembled together over the shaft 210, a pairof funnel-like gas blocking plates 230, as shown in FIG. 7, are coupledto both ends of the shaft 210 in order to join and support the sub-unitsand to block harmful gas from flowing into the assembly of the sub-unitswherein both ends of the shaft 210 protruding through respective shaftholes 210 a formed at the center of the gas blocking plates 230 arecoupled with coupling nuts 212.

A method of installing the internal electrode unit 40 into the externalelectrode unit 30 will now be described.

Referring to FIGS. 4 through 7, the internal electrode unit 40 is fixedon the house 110 of the external electrode unit 30 while both ends ofthe shaft 210 penetrating through the annular plates 240 constitutingthe internal electrode unit 40 are connected to respective support units214. In particular, one end of each of the support units 214 isconnected to a respective end of the shaft, and the other ends of thesupport units 214 penetrate through insulating fixing units 218 and arecoupled to coupling nuts 216. As shown in FIG. 4, the fixing unit 218 isfixed in a protruding portion of the housing 110 and is capped with acover 112 by a coupling element 114. Referring to FIG. 6, a wire 220electrically connected to the high voltage supply unit 50 shown in FIG.1 is coupled to the other ends of the support units 214 by a washer 224and a coupling bolt 222. The wire 220 externally extends through a hole116 formed in the cover 112.

FIG. 12 is a partial perspective view showing the reaction space 270 inthe PFC decomposing apparatus according to an embodiment of the presentinvention. Referring to FIG. 12, the cylindrical housing 110 of theexternal electrode unit 30 is spaced a predetermined distance from theindividual implanter poles 244 formed on the annular plates 240constituting the internal electrode unit 40, thereby resulting in thereaction space 270 between the external electrode unit 30 and theinternal electrode unit 40. The reaction space 270 may be conditioned atan ambient temperature and pressure. Harmful gases containing PFCs aredecomposed in the reaction space 270 by vapor laser, electron beams, lowtemperature plasma, plasmon, plasma oscillations, ultraviolet (UV) rays,etc.

Regarding phenomena occurring in the reaction space 270, as gasmolecules adsorbed on the metallic surfaces forming the reaction partsare irradiated with radiant light generated due to the application of ahigh voltage into the reaction space 270, the electromagnetic propertiesof the metallic material and the electromagnetic components of theradiant light interact, so that an electromagnetic filed of the Ramanscattered radiant light is greatly amplified.

As radiant light is emitted and scatters in the reaction space 270 ofthe PFC decomposing apparatus, Rayleigh scattering or Raman scattering,which are discriminated from one another by the wavelength of thescattered light, occurs. Rayleigh scattering is a phenomenon whereradiant light in the reaction space 270 of the apparatus scatters intoalmost the same frequency as the incident light. In this case, theintensity of scattered light varies according to the size of particles,the wavelength of incident light, and the polarizability of a sample,whereas the wavelength of the scattered light is consistent with that ofthe incident light regardless of the properties of particles. Ramanscattering is a phenomenon where light incident on sample particlesscatters into light of a different frequency from the incident light.The Raman scattering theory was first reported in 1928 by Indianphysicist Dr. C. V. Raman. C. V. Raman was awarded a Nobel prize inphysics in 1930 for the scientific value of his scattering theory andits highly probable applications in science and technical fields.

The most widely acknowledged theoretical model for the phenomenonoccurring under high voltage conditions as in the reaction space 270 ofthe decomposing apparatus according to the present invention is thelocalized particle plasmon model based on Maxwell's equations.

As a high-frequency, high-voltage transducer applies high energy intothe system, a high voltage of tens of kilovolts and a high frequencycomponent of several kiloHertz are induced in the system, creating aplasma state where ions, electrons, or neutral atoms, and molecules areuniformly distributed under an equilibrium of positive and negativecharges.

Although the condition of the system is neutral as a whole, sinceparticles having opposite charges are mixed up therein, microscopicelectric fields are generated by the local separation of the ions andelectrons, and electric currents and magnetic fields are induced due tomotion of the charges. In addition, intermittent changes in thedistribution of the charges cause the charged particles to oscillate,which is called “plasma oscillation”. The quantized energy emittedduring plasma oscillation is called “plasmon”, and is classified aseither of “bulk plasmon” or “surface plasmon”.

When the oscillating electronic transition dipole moment of moleculesoccurs on the surface of the implanter poles 244 and between the sharptips of the implanter poles 244, the optical characteristics of themolecules, for example, absorbance, fluorescence, etc., change, andtherefore, the resonant Raman scattering characteristics also changes.

The surface characteristics of an electromagnetic field in the reactionspace 270 affecting the intensity of a Raman scattering spectrum are asfollows. First, the reflection of incident light in the electromagneticfield due to a high voltage emission increases the strength of theelectromagnetic field. Second, dipoles generated due to the scatteringof UV light lead to localized changes in the intensity of theelectromagnetic field. Third, constructive interference of plasma onmetal tip surfaces and scattered light, or a resonance effect amplifiesthe electromagnetic field in a light scattering area.

The local electromagnetic field amplified due to the scattering ofmolecules on the surface of the implanter poles 244 in the systemprovides the following effects. First, the transition oscillatorstrength, such as an absorption coefficient, increases due to theelectric field generated by the reflected light. Second, the intensityof an energy band excited by the incident light increases. Third, thefrequency of oscillating dipoles is slightly shifted.

When the arrangement of the implanter poles 244 is perpendicular to thesurface of the annular plate thereof, the normal Raman scatteringintensity is known to increase by about 30 times due to the amplifiedlocalized electromagnetic field. As the internal electrons of the SUSmetal used for the system and oscillating dipoles resonate, theintensity of scattering is amplified.

When the electromagnetic field of the SUS metal is excited directly to ahigh energy level by the incident scattered light, the localizedelectromagnetic field intensity on the electrode metal surface in thereaction space is expected to be greatly amplified. A resonance betweenthe metal component of the system and the electromagnetic field createdby the incident light is induced by surface plasmons. Metal plasmons inthe lowest energy region resonate with the common frequency of Ramanscattered light and are generated only on the metal surface, so they arecalled “localized surface plasmons”. Such localized surface plasmons maybe manifested by electromagnetic waves traveling along the surface ofthe metal electrode in the reaction space within the system.

A transducer provides a high-frequency, negative high voltage as anenergy source. Therefore, a wide range of electromagnetic waves aregenerated within the reaction space of the system. In this state,various new chemical and/or physical changes occur within the reactionspace.

As an example, acetone molecules have strong bonds joining electronpairs, which are mostly C—C bonds. When acetone molecules are applied toan electrode that is highly likely to accept electrons, electrons arereleased from the acetone molecules. When a sufficient amount of energyis applied, one electron paired in the C—C bond is released while theother electron that has affinity with the field of intersectingelectromagnetic lines of a wide band remains. As a result, the C—C bondwith only one electron is easily cleaved into a positive methyl ion.

When a high voltage is applied to the sharp tips of the implanter polesto generate electromagnetic waves, the electron bond become unstablewithin electromagnetic waves that are repulsive to the electrons and iscleaved into separate electrons.

Regarding electrostatic phenomena, a charge electrode emits a highintensity of UV light, wherein the UV light nonspecifically activate theelectrons. The UV light bombards electron pairs as an effective energysource for dissociating the electron pairs. Then, the separate electronsare readily moved into other molecules within electromagnetic waves thatare repulsive to the electrons.

When acetone molecules are irradiated with UV light for a while, oneelectron of the electron pair in the C—C bond migrates into a region ofelectromagnetic waves that are repulsive to the electrons of the C—Cbond. The C—C bond with the unpaired electron is likely to be cleaved.

As described above, an electron beam of a high energy and high densityis efficiently generated within the reaction space 270 at an ambienttemperature and an ambient pressure to dissociate the binding structureof a perfluorinated compound gas into hydrogen fluoride, water, andcarbon dioxide, which can be processed further in the wet-type scrubber60 (see FIG. 1).

Hereinafter, the high voltage supply unit 50 shown in FIG. 1 forprocessing the PFC gas will be described.

In an embodiment, a high-frequency voltage (HV) capacitor is used as ahigh-voltage current device for processing the PFC gas. The high-voltagecurrent device, which causes expansion of the gas to increase pressure,may be implemented by connecting a plurality of small units ofcapacitors in series or in parallel. A general high-capacity currentgenerator may be used as the high-voltage current device after itsinherent characteristics are compensated for. When HV capacitors andother applicable parts are assembled, and a trigger time is varied, avery complicated current waveform can be obtained. FIG. 13A is a circuitdiagram of a high-capacity current generator using a general HVcapacitor, and FIG. 13B is a load current waveform of the high-capacitycurrent generator of FIG. 13A. In FIG. 13A, C₀ denotes a condenser, Rdenotes a charging resistor, SW denotes a starting switch, R₀ denotes acombined resistance, L₀ denotes inductance, R₀ denotes load resistance,L₁ denotes load inductance, and i denotes load current.

When the PFC decomposing apparatus according to the present invention isattached to such a high-capacity current generator with the HV capacitorC₀ fully charged, an equivalent crowbar circuit is constructed, whichserves as an energy supply unit for the PFC processing system. When theelectrical impedance of the PFC decomposing apparatus is entirelyresistive, an exponentially attenuating waveform is obtained. When theelectrical impedance of the PFC decomposing apparatus is entirelyinductive, an oscillating waveform is obtained.

FIG. 14A is a basic circuit diagram of a conventional crossbar circuit,and FIG. 14B is a load current waveform of the crossbar circuit of FIG.14A. As shown in FIG. 14A, the conventional crossbar circuit includes adriving gap and a crowbar switching gap. In FIG. 4B, i denotes crowbarcurrent, and i₀ denotes non-crowbar current.

For longer-wavelength energy generation, the capacitance or loadresistance of the HV capacitor may be increased. However, the systemsize becomes large and the current level becomes low. Accordingly, theequivalent crowbar circuit described above is frequently used. In thecrowbar circuit, the energy of the condenser C₀ is discharged to theload inductance. FIG. 15A is a diagram of an equivalent crowbar circuitconnected to the PFC decomposing apparatus according to the presentinvention. FIG. 15B is a load current waveform of the crowbar circuit ofFIG. 15A.

At a maximum inductance current level, i.e., when the energy level ofthe HV capacitor is almost discharged, the PFC decomposing apparatus isovercharged. Immediately before overdischarging of the PFC decomposingapparatus, the current waveform attenuates to a time constant determinedby the inductance and resistance of the circuit, as shown in FIG. 15B.

To generate a large amount of current, a plurality of HV capacitors needto be connected in series and in parallel, as described above, and thesame voltage must be applied across each HV capacitor.

FIG. 17 is an equivalent circuit diagram of a high-frequency voltagesupplying apparatus for a plurality of PFC decomposing apparatusesaccording to the present invention. FIG. 18 is a perspective view of aplurality of PFC decomposing apparatuses according to the presentinvention arranged in series. FIG. 19 is a perspective view of aplurality of PFC decomposing apparatuses according to the presentinvention arranged in series and in parallel. In FIG. 17, N denotes thenumber of PFC decomposing apparatuses that are connected.

A PFC processing system according to the present invention, as shown inFIGS. 17 and 18, is for efficiently processing a large amount of PFCs.The processing system with the external electrode unit spaced from andparallel to the internal metal electrode unit requires are longerinitial charging period in order for the entire system to be stably andfully charged with an essential amount of energy. In addition, after anamount of energy is discharged for processing, the system needs to berapidly and continuously charged to retain a constant amount of energytherein. To this end, the waveform of supplying energy and a currentsupply should be appropriately controlled. Since the PFC processingsystem according to the present invention is a large-scale systemincluding a plurality of PFC processing apparatuses connected in seriesand in parallel, it is very difficult to charge the system to a peaklevel within a short period of time.

To address this concern, a rectangular high-voltage current pulse havinga steep rise period is preferred for the high voltage supply unit 50according to the present invention. A method using a line pulser is usedto generate rectangular current waves. A circuit including a pluralityof lumped inductors L connected in series and a plurality of capacitorsC connected in parallel is used to generate the rectangular currentwaves. The operational principles of the high voltage supply unit 50according to the present invention are similar to those of the linepulser, in consideration of the electrical characteristics of the highvoltage supply unit 50.

FIGS. 16A and 16B are 3-dimensional and 2-dimensional equivalent circuitdiagrams, respectively, illustrating the principles of using rectangularwaves to rapidly charge the PFC processing system according to thepresent invention. FIG. 16C is a waveform of the circuit of FIGS. 16Aand 16B.

If the circuit is a zero-loss circuit with a constant lumped induced Land capacitance C, pulses having no attenuation and distortion aregenerated. After charging to a voltage V and closing switch S, voltage eflows across road resister R, as shown in FIG. 16B, wherein voltage e isexpressed as:e=RV/(Z+R)

When R=Z, a pulse having a voltage of V/2 and a width of 2T isgenerated, as shown in FIG. 16C, wherein T denotes a time required for apulse to pass through the circuit and is expressed as T=L/v, wherein vdenotes the velocity of waves. Through the above-described mechanism,the PFC processing system according to the present invention can becharged to a peak energy level required to operate within a short periodof time.

The performance of the PFC processing system for processing variousPFCs, which are commonly generated in the manufacture of semiconductordevices, at an ambient temperature and ambient pressure according to thepresent invention was evaluated. The results are shown in Table 1 below.

TABLE 1 PFC concentration PFC concentration Reduction ratio PFC gasbefore processing after processing (%) CF₄ 60 3 95 C₃F₈ 65 6 91 NF₈ 50 590

The PFC processing system tested was constructed by connectingprocessing units, each of which has a throughput of 10 m³/min, inparallel to provide a total throughput of 50 m³/min. The primary powerconsumption of the energy supply unit was 3φ, 220V, and 60 A or less.The processing efficiency was analyzed on-line using Fourier TransformInfra Red (FTIR) spectrometers attached to the front and rear ends ofthe processing system and using 10M-cells. FTIR spectrometers arecommonly used worldwide to analyze PFC-containing exhaust gases,although they are not available for homogeneous molecules such as F₂,Cl₂, etc.

C₈F₈ and NF₃ are known to be used most frequently when cleaning achamber after chemical vapor deposition (CVD), and CF₄ is a byproductfrom the cleaning using C₃F₈. As shown in Table 1 above, the PFCprocessing system according to the present invention showed a processingefficiency of 90% or greater for all of the PFC gases analyzed.

According to the present invention, more processing units may beconnected in series and further in parallel, as shown in FIGS. 18 and19, in order to increase the processing efficiency. In other words, thenumber of processing units connected to construct a PFC processingsystem according to the present invention can be varied according to thedesired processing efficiency and throughput.

A PFC processing system according to the present invention can bedirectly connected to an exhaust duct of a semiconductor manufacturingline, or by set up outside and used in conjunction with an existingsemiconductor manufacturing line set up within a small space. Moreover,since a PFC processing system can be added to a conventional processingsystem using only scrubbers, costs associated with its implementationare low.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention.

1. Manufacturing equipment comprising a reaction chamber in which aprocess producing exhaust gas containing perfluorinated compounds (PFCs)is executed, and a system for processing the perfluorinated compounds(PFCs), the system comprising: a pumping unit connected to an outlet ofthe reaction chamber and comprising a pump that pumps out the gascontaining the PFCs from the reaction chamber; a decomposition apparatusconnected to the pumping unit so as to receive the gas discharged fromthe reaction chamber by the pump of the pumping unit, the decompositionapparatus including an external electrode unit coupled to a referencevoltage, an internal electrode unit supported by the external electrodeunit, and a voltage generator connected to the internal electrode unit,the external electrode unit comprising a tubular housing having oppositeopen ends, the interior of the housing communicating with the pumpingunit through one of the open ends of the housing such that the gascontaining PFCs discharged from the reaction chamber by the pumping unitflows into the tubular housing through the one of the open ends; theinternal electrode unit comprising an electrically conductive shaft,electrically conductive supports connected to the shaft and suspendingthe shaft within the tubular housing such that the shaft issubstantially coaxial with the tubular housing, and a plurality ofimplanter poles fixed to the shaft so as to be electrically conductivelyconnected to the shaft, the implanter poles protruding radially towardthe housing of the external electrode unit and spaced radially inwardlyof an inner surface of the housing of the external electrode unit suchthat a reaction space is defined by and between the implanter poles andthe housing of the external electrode unit, and the implanter polesbeing spaced at regular intervals in a circumferential direction of thehousing, and the voltage generator electrically conductively connectedto the supports such that electrical energy is applied to the PFCsdischarged by the pumping unit to decompose the PFCs into compounds thatcan be wet processed; and a scrubber connected to the decompositionapparatus via the other end of the tubular housing of the externalelectrode unit so as to receive and wet process the compounds which havebeen decomposed by the decomposition apparatus.
 2. The equipment ofclaim 1, wherein the reaction chamber is a dry etching chamber or achemical vapor deposition chamber.
 3. The equipment of claim 1, whereina plurality of decomposition apparatuses are connected in series or inparallel.
 4. The equipment of claim 1, wherein the voltage generator isan alternating voltage supply unit which applies an alternating voltageto the internal electrode unit of sufficient voltage and frequency togenerate an electron beam capable of decomposing the PFCs within thereaction.
 5. The equipment of claim 4, wherein the housing of theexternal electrode unit is cylindrical, and wherein the internalelectrode unit further comprises: a plurality of coaxial annular plates,each of the annular plates having an outer edge, and a respective set ofthe implanter poles protruding radially outwardly from the outer edgeand having tips spaced from one another at regular intervals in adirection along the outer edge; and a plurality of guide ringsrespectively interposed between the annular plates of each adjacent pairthereof and spacing the annular plates from one another at regularintervals.
 6. The equipment of claim 5, wherein each annular plate has atotal of 75 of the implanter poles, and wherein the implanter poles ofeach of the annular plates are angularly offset by 1.2 degrees withrespect to the implanter poles of each annular plate adjacent thereto.7. The equipment of claim 5, wherein the thickness of each of the guiderings is 2.5-3.5 times greater than the thickness of the annular platesbetween which the guide ring is disposed.
 8. The equipment of claim 5,wherein the internal electrode unit further comprises gas blockingplates fixed to the shaft and between which the coaxial annular platesand guide rings are interposed, each of the gas blocking plates taperingin a direction toward a respective one of the ends of the tubularhousing such that each of the gas blocking plates is funnel-shaped. 9.The equipment of claim 4, wherein the voltage generator comprises a linepulser device which generates rectangular current pulses.
 10. Theequipment of claim 1, wherein the voltage generator comprises a crowbarcircuit containing a discharge capacitor.
 11. The equipment of claim 1,wherein the internal electrode unit further comprises fixtures ofelectrically insulative material supported by the external electrodeunit above the tubular housing, and wherein the supports of the internalelectrode unit are coupled to the fixtures, respectively, and extendtherefrom into the tubular housing of the external electrode unit. 12.The equipment of claim 1, wherein the supports pass through theelectrically insulative fixtures, the internal electrode unit furthercomprises nuts fixed to the supports and supported by the electricallyinsulative fixtures, and the voltage generator has wiring connected tothe nuts.